2PD2150
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Please refer to the product specifications
2PD2150
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SKU:
2PD2150,115
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Short Description:
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Description:
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: 2PB1424.
- Datasheet:
Stock: 13000
Features
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
AEC-Q101 qualified
Applications
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
Datasheet
