BAS116L

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

BOM New Arrivals Specials Automotive

Skip to the end of the images gallery

BAS116L

main product photo

The image is for reference only

Please refer to the product specifications

BAS116L

SKU:
BAS116LYL
Date Code:
2349+
Short Description:
Low-leakage diode
Description:

Single low leakage current switching diode, encapsulated in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package.
Datasheet:
Download the Datasheet

Skip to the beginning of the images gallery

Stock: 1460000

Qty:

Price: $0.0245

Total: $0.0245

Price

Qty Price Total price: 1 $0.0245 $0.0245; 500 $0.0223 $11.1500; 1000 $0.0213 $21.3000; 3000 $0.0202 $60.6000

Features

Switching time typical: t_rr = 0.8 µs
Low leakage current typical: I_R = 3 pA
Repetitive peak reverse voltage: V_RRM ≤ 85 V
Low capacitance typical: C_d = 2 pF
Leadless ultra small SMD plastic package
Low package height of 0.48 mm
AEC-Q101 qualified

Applications

Low-leakage current applications
General-purpose switching

Datasheet

Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode

PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P