BAS16LD

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

BOM New Arrivals Specials Automotive

Skip to the end of the images gallery

BAS16LD

main product photo

The image is for reference only

Please refer to the product specifications

BAS16LD

SKU:
BAS16LD,315
Date Code:
2517+
Short Description:
Single high-speed switching diode
Description:

Single high-speed switching diode, encapsulated in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
Datasheet:
Download the Datasheet

Skip to the beginning of the images gallery

Stock: 1490000

Qty:

Price: $0.0137

Total: $0.0137

Price

Qty Price Total price: 1 $0.0137 $0.0137; 500 $0.0124 $6.2000; 1000 $0.0118 $11.8000; 3000 $0.0113 $33.9000

Features

High switching speed: t_rr ≤ 4 ns
Low capacitance
Low leakage current
Reverse voltage: V_R ≤ 100 V
Repetitive peak reverse voltage: V_RRM ≤ 100 V
Ultra small and leadless SMD plastic package
AEC-Q101 qualified
Solderable side pads

Applications

High-speed switching
General-purpose switching

Datasheet

Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode

PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P