• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
BAS40LS
main product photo

The image is for reference only

Please refer to the product specifications

BAS40LS
  • SKU:
    BAS40LS-QYL
  • Date Code:
    2330+
  • Short Description:
      Q - General-purpose Schottky diode
  • Description:
     

    General-purpose Schottky diode in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with side-wettable flanks.

  • Datasheet:
    Download the Datasheet
Stock: 30000
Qty:
Price: $0.0271
Total: $0.0271
Price
Qty Price Total price
1 $0.0271 $0.0271
500 $0.0246 $12.3000
1000 $0.0234 $23.4000
3000 $0.0223 $66.9000

Features

  • High switching speed

  • Low leakage current

  • High breakdown voltage

  • Low capacitance

  • Suitable for Automatic Optical Inspection (AOI) of solder joint

  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Ultra high-speed switching

  • Voltage clamping

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P