• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
BAT54J
main product photo

The image is for reference only

Please refer to the product specifications

BAT54J
  • SKU:
    BAT54J-QX
  • Short Description:
      Q - Schottky barrier single diode
  • Description:
     

    Planar Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated in a very small and flat lead SOD323F (SC-90) Surface-Mounted Device (SMD) plastic package.

  • Datasheet:
    Download the Datasheet
Stock: 5679000
Qty:
Price: $0.0237
Total: $0.0237
Price
Qty Price Total price
1 $0.0237 $0.0237
500 $0.0216 $10.8000
1000 $0.0205 $20.5000
3000 $0.0196 $58.8000

Features

  • Low forward voltage

  • Very small and flat lead SMD plastic package

  • Low capacitance

  • Flat leads: excellent coplanarity and improved thermal behavior

  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Voltage clamping

  • Line termination

  • Reverse polarity protection

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P