• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
BAT721C
main product photo

The image is for reference only

Please refer to the product specifications

BAT721C
  • SKU:
    BAT721C,215
  • Short Description:
      40 V, 200 mA Schottky barrier dual diode
  • Description:
     

    Planar Schottky barrier dual diode with an integrated guard ring for stress protection, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

  • Datasheet:
    Download the Datasheet
Stock: 2382000
Qty:
Price: $0.0508
Total: $0.0508
Price
Qty Price Total price
1 $0.0508 $0.0508
500 $0.0462 $23.1000
1000 $0.044 $44.0000
3000 $0.0419 $125.7000

Features

  • Low forward voltage

  • Low capacitance

  • AEC-Q101 qualified

Applications

  • Ultra high-speed switching

  • Line termination

  • Voltage clamping

  • Reverse polarity protection

Parent topic: Features and benefits
Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P