BAV70M

BAV70M

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Please refer to the product specifications

BAV70M

SKU:
BAV70M,315
Date Code:
2343+
Short Description:
High-speed switching diode
Description:

High-speed switching diode, encapsulated in an ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package.
Datasheet:
Download the Datasheet

Stock: 930000

Qty:

Price: $0.0238

Total: $0.0238

Price

Qty Price Total price: 1 $0.0238 $0.0238; 500 $0.0217 $10.8500; 1000 $0.0206 $20.6000; 3000 $0.0197 $59.1000

Datasheet

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

600 V, 30 A trench field-stop IGBT with full rated silicon diode

650 V, 10 A SiC Schottky diode in TO-220-2 R2P