BAV70SRA

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

BOM New Arrivals Specials Automotive

Skip to the end of the images gallery

BAV70SRA

main product photo

The image is for reference only

Please refer to the product specifications

BAV70SRA

SKU:
BAV70SRAZ
Date Code:
2348+
Short Description:
Quad high-speed switching diodes
Description:

Quad high-speed switching diodes with common cathode configurations encapsulated in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package.
Datasheet:
Download the Datasheet

Skip to the beginning of the images gallery

Stock: 20000

Qty:

Price: $0.04

Total: $0.04

Price

Qty Price Total price: 1 $0.04 $0.04; 500 $0.0364 $18.2000; 1000 $0.0347 $34.7000; 3000 $0.033 $99.0000

Features

High switching speed: t_rr ≤ 4 ns
Low leakage current: I_R ≤ 0.5 µA
Reverse voltage V_R ≤ 100 V
Low capacitance C_d ≤ 1.5 pF
Ultra small SMD plastic package
AEC-Q101 qualified

Applications

High-speed switching
General-purpose switching

Datasheet

Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode

PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P