60 V, 1 A PNP medium power transistor@en

The image is for reference only

Please refer to the product specifications

60 V, 1 A PNP medium power transistor@en

SKU:
BC52PA,115
Date Code:
2501+
Short Description:
us
Description:

PNP medium power transistor in a SOT1061 leadless very small Surface-Mounted Device (SMD) plastic package. NPN complement: BC55PA.
Datasheet:
Download the Datasheet

Stock: 51000

Qty:

Price: $0.0584

Total: $0.0584

Price

Qty Price Total price: 1 $0.0584 $0.0584; 500 $0.0531 $26.5500; 1000 $0.0506 $50.6000; 3000 $0.0482 $144.6000

Datasheet

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

600 V, 30 A trench field-stop IGBT with full rated silicon diode

650 V, 10 A SiC Schottky diode in TO-220-2 R2P