• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
BC817
main product photo

The image is for reference only

Please refer to the product specifications

BC817
  • SKU:
    BC817-16-QVL
  • Short Description:
      Q series - 45 V, 500 mA NPN general-purpose transistors
  • Description:
     

    NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

    Table 1. Product overview

    Type number

    Package

    PNP complement

    Nexperia

    JEDEC

    		JEITA

    BC817-Q

    		SOT23

    TO-236AB

    -

    BC807-Q

    BC817-16-Q

    BC807-16-Q

    BC817-25-Q

    BC807-25-Q

    BC817-40-Q

    BC807-40-Q

  • Datasheet:
    Download the Datasheet
Stock: 140000
Qty:
Price: $0.011
Total: $0.011
Price
Qty Price Total price
1 $0.011 $0.011
500 $0.01 $5.0000
1000 $0.0095 $9.5000
3000 $0.0091 $27.3000

Features

  • High current

  • Three current gain selections

  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • General-purpose switching and amplification

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P