• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
BCP53H
main product photo

The image is for reference only

Please refer to the product specifications

BCP53H
  • SKU:
    BCP53-16H-QX
  • Short Description:
      Q series - 80 V, 1 A PNP medium power transistors
  • Description:
     

    PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

  • Datasheet:
    Download the Datasheet
Stock: 99984999
Qty:
Price: $0.0728
Total: $0.0728
Price
Qty Price Total price
1 $0.0728 $0.0728
500 $0.0662 $33.1000
1000 $0.063 $63.0000
3000 $0.06 $180.0000

Features

  • High collector current capability IC and ICM

  • Three current gain selections

  • High power dissipation capability

  • High-temperature applications up to 175 °C

  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Linear voltage regulators

  • MOSFET drivers

  • High-side switches

  • Power management

  • Amplifiers

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P