20 V, 2 A PNP medium power transistor@en

The image is for reference only

Please refer to the product specifications

20 V, 2 A PNP medium power transistor@en

SKU:
BCP69,115
Date Code:
2515+
Short Description:
us
Description:

PNP medium power transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. NPN complement: BCP68.
Datasheet:
Download the Datasheet

Stock: 245000

Qty:

Price: $0.0575

Total: $0.0575

Price

Qty Price Total price: 1 $0.0575 $0.0575; 500 $0.0522 $26.1000; 1000 $0.0497 $49.7000; 3000 $0.0474 $142.2000

Datasheet

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

600 V, 30 A trench field-stop IGBT with full rated silicon diode

650 V, 10 A SiC Schottky diode in TO-220-2 R2P