• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
BXK9Q29
main product photo

The image is for reference only

Please refer to the product specifications

BXK9Q29
  • SKU:
    BXK9Q29-60AJ
  • Short Description:
      60A - 60 V, N-channel Trench MOSFET
  • Description:
     

    N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT8002-3 (MLPAK33) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

  • Datasheet:
    Download the Datasheet
Stock: 60000
Qty:
Price: $0.0976
Total: $0.0976
Price
Qty Price Total price
1 $0.0976 $0.0976
500 $0.0888 $44.4000
1000 $0.0845 $84.5000
3000 $0.0805 $241.5000

Features

  • Logic-level compatible

  • Very fast switching

  • Trench MOSFET technology

  • Fully automotive qualified to AEC-Q101 at 175°C

  • Side-wettable flanks for optical solder inspection

Applications

  • LED Lighting

  • Switching circuits

  • DC-DC conversion

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P