MMBZ27VA

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

BOM New Arrivals Specials Automotive

Skip to the end of the images gallery

MMBZ27VA

main product photo

The image is for reference only

Please refer to the product specifications

MMBZ27VA

SKU:
MMBZ27VA-TR
Short Description:
T - TVS device for surge protection of interface and supply lines
Description:

ESD protection device in a small SOT23 Surface-Mounted Device (SMD) plastic package designed to protect two lines from the damage caused by transient overvoltages (TVS).
Datasheet:
Download the Datasheet

Skip to the beginning of the images gallery

Stock: 99999999

Qty:

Price: $0.0188

Total: $0.0188

Price

Qty Price Total price: 1 $0.0188 $0.0188; 500 $0.0171 $8.5500; 1000 $0.0163 $16.3000; 3000 $0.0155 $46.5000

Features

Reverse stand-off voltage: V_RWM = 22 V
Low clamping voltage: V_CL = 55 V max at I_PP = 4.2 A
ESD protection up to 30 kV (IEC 61000-4-2)
Ultra low leakage current: I_RM < 1 nA

Applications

ESD protection for supply and interface lines with high signal levels.

Industrial
Consumer
Computing

Datasheet

Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode

PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P