The store will not work correctly when cookies are disabled.
JavaScript seems to be disabled in your browser.
For the best experience on our site, be sure to turn on Javascript in your browser.
New Arrivals
DFN0606 MOSFET：小封装里的高效器件 用更少的器件实现更多的功能，这是移动和便携式应用（尤其是可穿戴设备）的宗旨。通过使用可用的最高效开关选项，设计人员可以获得更多的空间来嵌入功能，同时最大程度地减少电池消耗。Nexperia新推出的小信号MOSFET采用超小型DFN0606封装，能够大幅节省空间，且导通电阻超低。
查看详情
DFN0606 MOSFET：小封装里的高效器件2 用更少的器件实现更多的功能，这是移动和便携式应用（尤其是可穿戴设备）的宗旨。通过使用可用的最高效开关选项，设计人员可以获得更多的空间来嵌入功能，同时最大程度地减少电池消耗。Nexperia新推出的小信号MOSFET采用超小型DFN0606封装，能够大幅节省空间，且导通电阻超低。
查看详情
DFN0606 MOSFET：小封装里的高效器件3 用更少的器件实现更多的功能，这是移动和便携式应用（尤其是可穿戴设备）的宗旨。通过使用可用的最高效开关选项，设计人员可以获得更多的空间来嵌入功能，同时最大程度地减少电池消耗。Nexperia新推出的小信号MOSFET采用超小型DFN0606封装，能够大幅节省空间，且导通电阻超低。
查看详情
Product Description Price Stock Datasheet Action
PESD24VF1BLS-QYL
Q - Ultra-low capacitance bidirectional ESD protection diode
Stock: 99999999
1+: $0.0377
500+: $0.0342
1000+: $0.0326
3000+: $0.0311
1+: $0.0377
500+: $0.0342
1000+: $0.0326
3000+: $0.0311
99999999
PESD30VF1BLS-QYL
Q - Ultra-low capacitance bidirectional ESD protection diode
Stock: 20000
1+: $0.0484
500+: $0.0440
1000+: $0.0419
3000+: $0.0399
1+: $0.0484
500+: $0.0440
1000+: $0.0419
3000+: $0.0399
20000
PESD32VF1BLS-QYL
Q - Ultra-low capacitance bidirectional ESD protection diode
Stock: 99999999
1+: $0.0505
500+: $0.0459
1000+: $0.0437
3000+: $0.0416
1+: $0.0505
500+: $0.0459
1000+: $0.0437
3000+: $0.0416
99999999
PESD3V3L1BBSFYL
Very low clamping bidirectional ESD protection diode
Stock: 99999999
1+: $0.0474
500+: $0.0431
1000+: $0.0411
3000+: $0.0391
1+: $0.0474
500+: $0.0431
1000+: $0.0411
3000+: $0.0391
99999999
PESD5V5C1UL-QYL
Q - Extremely low clamping unidirectional ESD protection diode
Stock: 99999999
1+: $0.0544
500+: $0.0494
1000+: $0.0471
3000+: $0.0449
1+: $0.0544
500+: $0.0494
1000+: $0.0471
3000+: $0.0449
99999999
PESD5V5C1BL-QYL
Q - Extremely low clamping bidirectional ESD protection diode
Stock: 750000
1+: $0.0676
500+: $0.0615
1000+: $0.0586
3000+: $0.0558
1+: $0.0676
500+: $0.0615
1000+: $0.0586
3000+: $0.0558
750000
PMCXB290UEZ
20 V, complementary N/P-channel Trench MOSFET
Stock: 10000
1+: $0.0679
500+: $0.0617
1000+: $0.0588
3000+: $0.0560
1+: $0.0679
500+: $0.0617
1000+: $0.0588
3000+: $0.0560
10000
PMDXB590UPEZ
20 V, dual P-channel Trench MOSFET
Stock: 99984999
1+: $0.0660
500+: $0.0600
1000+: $0.0571
3000+: $0.0544
1+: $0.0660
500+: $0.0600
1000+: $0.0571
3000+: $0.0544
99984999
PSMN047-100NSEX
100NSE - N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed
for high power PoE, inrush management, eFuse and relay replacement
Stock: 99999999
1+: $0.1372
500+: $0.1248
1000+: $0.1188
3000+: $0.1132
1+: $0.1372
500+: $0.1248
1000+: $0.1188
3000+: $0.1132
99999999
PESD24VF1BLS-QYLPESD24VF1BLSPESD24VF1BLS-QYLQ - Ultra-low capacitance bidirectional ESD protection diodeStock: 999999991+: $0.0377500+: $0.03421000+: $0.03263000+: $0.03111+: $0.0377500+: $0.03421000+: $0.03263000+: $0.031199999999
PESD30VF1BLS-QYLPESD30VF1BLSPESD30VF1BLS-QYLQ - Ultra-low capacitance bidirectional ESD protection diodeStock: 200001+: $0.0484500+: $0.04401000+: $0.04193000+: $0.03991+: $0.0484500+: $0.04401000+: $0.04193000+: $0.039920000
PESD32VF1BLS-QYLPESD32VF1BLSPESD32VF1BLS-QYLQ - Ultra-low capacitance bidirectional ESD protection diodeStock: 999999991+: $0.0505500+: $0.04591000+: $0.04373000+: $0.04161+: $0.0505500+: $0.04591000+: $0.04373000+: $0.041699999999
PESD3V3L1BBSFYLPESD3V3L1BBSFPESD3V3L1BBSFYLVery low clamping bidirectional ESD protection diodeStock: 999999991+: $0.0474500+: $0.04311000+: $0.04113000+: $0.03911+: $0.0474500+: $0.04311000+: $0.04113000+: $0.039199999999
PESD5V5C1UL-QYLPESD5V5C1ULPESD5V5C1UL-QYLQ - Extremely low clamping unidirectional ESD protection diodeStock: 999999991+: $0.0544500+: $0.04941000+: $0.04713000+: $0.04491+: $0.0544500+: $0.04941000+: $0.04713000+: $0.044999999999
PESD5V5C1BL-QYLPESD5V5C1BLPESD5V5C1BL-QYLQ - Extremely low clamping bidirectional ESD protection diodeStock: 7500001+: $0.0676500+: $0.06151000+: $0.05863000+: $0.05581+: $0.0676500+: $0.06151000+: $0.05863000+: $0.0558750000
PMCXB290UEZPMCXB290UEPMCXB290UEZ20 V, complementary N/P-channel Trench MOSFETStock: 100001+: $0.0679500+: $0.06171000+: $0.05883000+: $0.05601+: $0.0679500+: $0.06171000+: $0.05883000+: $0.056010000
PMDXB590UPEZPMDXB590UPEPMDXB590UPEZ20 V, dual P-channel Trench MOSFETStock: 999849991+: $0.0660500+: $0.06001000+: $0.05713000+: $0.05441+: $0.0660500+: $0.06001000+: $0.05713000+: $0.054499984999
PSMN047-100NSEXPSMN047PSMN047-100NSEX100NSE - N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacementStock: 999999991+: $0.1372500+: $0.12481000+: $0.11883000+: $0.11321+: $0.1372500+: $0.12481000+: $0.11883000+: $0.113299999999