• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
PBHV8215Z
main product photo

The image is for reference only

Please refer to the product specifications

PBHV8215Z
  • SKU:
    PBHV8215Z,115
  • Short Description:
      150 V, 2 A NPN high-voltage low VCEsat transistor
  • Description:
     

    NPN high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

    PNP complement: PBHV9215Z

  • Datasheet:
    Download the Datasheet
Stock: 186000
Qty:
Price: $0.1654
Total: $0.1654
Price
Qty Price Total price
1 $0.1654 $0.1654
500 $0.1504 $75.2000
1000 $0.1432 $143.2000
3000 $0.1364 $409.2000

Features

  • High voltage

  • Low collector-emitter saturation voltage VCEsat

  • High collector current capability IC and ICM

  • High collector current gain (hFE) at high IC

  • Medium power SMD plastic package

  • AEC-Q101 qualified

Applications

  • LED driver for LED chain module

  • LCD backlighting

  • Automotive motor management

  • Switch Mode Power Supply (SMPS)

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P