PBRP123ET
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Please refer to the product specifications
PBRP123ET
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SKU:
PBRP123ET-QR
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Short Description:
Q - 40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ
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Description:
PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBRN123ET-Q
- Datasheet:
Stock: 27000
Features
600 mA output current capability
Low collector-emitter saturation voltage VCEsat
High current gain hFE
Reduces component count
Built-in bias resistors
Reduces pick and place costs
Simplifies circuit design
± 10 % resistor ratio tolerance
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
Digital application in automotive and industrial segments
Switching loads
Medium current peripheral driver
Datasheet
