PBSM5240PFH
The image is for reference only
Please refer to the product specifications
PBSM5240PFH
-
SKU:
PBSM5240PFH,115
-
Date Code:
2326+
-
Short Description:
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET
-
Description:
Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
- Datasheet:
Stock: 27000
Features
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High energy efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Applications
Load switch
Power management
Power switches (e.g. motors, fans)
Battery-driven devices
Charging circuits
Datasheet
