PBSS302NX
The image is for reference only
Please refer to the product specifications
PBSS302NX
-
SKU:
PBSS302NX,115
-
Short Description:
20 V, 5.3 A NPN low VCEsat transistor
-
Description:
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS302PX.
- Datasheet:
Stock: 99999999
Features
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
AEC-Q101 qualified
Applications
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)
Datasheet
