PBSS306NZ
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Please refer to the product specifications
PBSS306NZ
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SKU:
PBSS306NZ,135
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Short Description:
100 V, 5.1 A NPN low VCEsat (BISS) transistor
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Description:
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS306PZ.
- Datasheet:
Stock: 28000
Features
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
AEC-Q101 qualified
Applications
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
Datasheet
