PBSS4032NT
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Please refer to the product specifications
PBSS4032NT
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SKU:
PBSS4032NT,215
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Short Description:
30 V, 2.6 A NPN low VCEsat (BISS) transistor
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Description:
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PT.
- Datasheet:
Stock: 21000
Features
Low collector-emitter saturation voltage VCEsat
Optimized switching time
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Applications
DC-to-DC conversion
Battery-driven devices
Power management
Charging circuits
Datasheet