PBSS4260QA
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Please refer to the product specifications
PBSS4260QA
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SKU:
PBSS4260QAZ
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Short Description:
60 V, 2 A NPN low VCEsat (BISS) transistor
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Description:
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
PNP complement: PBSS5260QA.
- Datasheet:
Stock: 99999999
Features
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
High energy efficiency due to less heat generation
Reduced Printed-Circuit Board (PCB) area requirements
Solderable side pads
AEC-Q101 qualified
Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
Datasheet
