• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
PBSS5160PAPS
main product photo

The image is for reference only

Please refer to the product specifications

PBSS5160PAPS
  • SKU:
    PBSS5160PAPSX
  • Date Code:
    2350+
  • Short Description:
      60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
  • Description:
     

    PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

  • Datasheet:
    Download the Datasheet
Stock: 12000
Qty:
Price: $0.1524
Total: $0.1524
Price
Qty Price Total price
1 $0.1524 $0.1524
500 $0.1386 $69.3000
1000 $0.132 $132.0000
3000 $0.1257 $377.1000

Features

Applications

  • Load switch

  • Battery-driven devices

  • Power management

  • Charging circuits

  • LED lighting

  • Power switches (e.g. motors, fans)

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P