• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
PBSS5360X
main product photo

The image is for reference only

Please refer to the product specifications

PBSS5360X
  • SKU:
    PBSS5360XX
  • Short Description:
      60 V, 3 A PNP low VCEsat (BISS) transistor
  • Description:
     

    PNP low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.

    NPN complement: PBSS4360X

  • Datasheet:
    Download the Datasheet
Stock: 18000
Qty:
Price: $0.0785
Total: $0.0785
Price
Qty Price Total price
1 $0.0785 $0.0785
500 $0.0714 $35.7000
1000 $0.068 $68.0000
3000 $0.0647 $194.1000

Features

  • Low collector-emitter saturation voltage VCEsat

  • High collector current capability IC and ICM

  • High energy efficiency due to less heat generation

  • AEC-Q101 qualified

Applications

  • DC-to-DC conversion

  • Supply line switches

  • Battery charger

  • LCD backlighting

  • Driver in low supply voltage applications (e.g. lamps and LEDs)

  • Inductive load driver (e.g. relays, buzzers and motors)

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P