PDTA114TMB

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

BOM New Arrivals Specials Automotive

Skip to the end of the images gallery

PDTA114TMB

main product photo

The image is for reference only

Please refer to the product specifications

PDTA114TMB

SKU:
PDTA114TMB,315
Short Description:
PNP resistor-equipped transistor; R1 = 10 kΩ, R2 = open
Description:

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC114TMB.
Datasheet:
Download the Datasheet

Skip to the beginning of the images gallery

Stock: 99999999

Qty:

Price: $0.0287

Total: $0.0287

Price

Qty Price Total price: 1 $0.0287 $0.0287; 500 $0.0261 $13.0500; 1000 $0.0249 $24.9000; 3000 $0.0237 $71.1000

Features

100 mA output current capability
Reduces component count
Built-in bias resistors
Reduces pick and place costs
Simplifies circuit design
AEC-Q101 qualified
Leadless ultra small SMD plastic package
Low package height of 0.37 mm

Applications

Low-current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications
Mobile applications

Datasheet

Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode

PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P