• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
PDTA124ET
main product photo

The image is for reference only

Please refer to the product specifications

PDTA124ET
  • SKU:
    PDTA124ET,215
  • Date Code:
    2347+
  • Short Description:
      50 V, 100 mA PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ
  • Description:
     

    PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

    NPN complement: PDTC124ET

  • Datasheet:
    Download the Datasheet
Stock: 3585000
Qty:
Price: $0.0102
Total: $0.0102
Price
Qty Price Total price
1 $0.0102 $0.0102
500 $0.0093 $4.6500
1000 $0.0088 $8.8000
3000 $0.0084 $25.2000

Features

  • 100 mA output current capability

  • Built-in bias resistors

  • Simplifies circuit design

  • Reduces component count

  • Reduces pick and place costs

Applications

  • Digital application in industrial segments

  • Cost-saving alternative for BC847 series in digital applications

  • Controlling IC inputs

  • Switching loads

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P