• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
PDTA124T series
main product photo

The image is for reference only

Please refer to the product specifications

PDTA124T series
  • SKU:
    PDTA124TM,315
  • Short Description:
      PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = open
  • Description:
     

    PNP resistor-equipped transistor (see �Simplified outline, symbol and pinning� for package details).

  • Datasheet:
    Download the Datasheet
Stock: 99999999
Qty:
Price: $0.0237
Total: $0.0237
Price
Qty Price Total price
1 $0.0237 $0.0237
500 $0.0216 $10.8000
1000 $0.0205 $20.5000
3000 $0.0196 $58.8000

Features

  • Built-in bias resistors

  • Simplified circuit design

  • Reduction of component count

  • Reduced pick and place costs.

  • AEC-Q101 qualified

Applications

  • General purpose switching and amplification

  • Inverter and interface circuits

  • Circuit driver.

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P