• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
PESD12VA
main product photo

The image is for reference only

Please refer to the product specifications

PESD12VA
  • SKU:
    PESD12VA-SFYL
  • Short Description:
      SF - Ultra small 12 V ESD protection device
  • Description:
     

    Bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a leadless ultra small DSN0603-2 (SOD962) Surface-Mounted Device (SMD) package.

  • Datasheet:
    Download the Datasheet
Stock: 1602000
Qty:
Price: $0.0232
Total: $0.0232
Price
Qty Price Total price
1 $0.0232 $0.0232
500 $0.021 $10.5000
1000 $0.02 $20.0000
3000 $0.0191 $57.3000

Features

  • Bidirectional ESD protection of one line

  • High reverse standoff voltage VRWM = 12 V

  • High surge robustness; IPP = 7 A for 8/20 μs pulse (average measured)

Applications

  • Computers and peripherals

  • Audio and video equipment

  • Cellular handsets and accessories

  • Portable electronics

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P