• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
PESD3V3T1BLS
main product photo

The image is for reference only

Please refer to the product specifications

PESD3V3T1BLS
  • SKU:
    PESD3V3T1BLSAYL
  • Short Description:
      Bidirectional ESD protection diode
  • Description:
     

    Bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients.

    The device is housed in a leadless ultra small DFN1006BD-2 (SOD882BD) Surface-Mounted Device (SMD) plastic package with side-wettable flanks (SWF).

  • Datasheet:
    Download the Datasheet
Stock: 20000
Qty:
Price: $0.0452
Total: $0.0452
Price
Qty Price Total price
1 $0.0452 $0.0452
500 $0.0411 $20.5500
1000 $0.0391 $39.1000
3000 $0.0373 $111.9000

Features

  • Bidirectional ESD protection of one line

  • Side wettable flanks

  • ESD protection up to 30 kV

  • Very high surge robustness; IPP = 13.5 A for 8/20 µs; average measured

  • AEC-Q101 qualified

Applications

  • ESD and surge protection for interface lines

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P