PESD5V0S1UB

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

BOM New Arrivals Specials Automotive

Skip to the end of the images gallery

PESD5V0S1UB

main product photo

The image is for reference only

Please refer to the product specifications

PESD5V0S1UB

SKU:
PESD5V0S1UB,115
Date Code:
2352+
Short Description:
ESD protection diode
Description:

Unidirectional ElectroStatic Discharge (ESD) protection diode in a SOD523 plastic package designed to protect one transmission or data line from the damage caused by ESD and other transients.
Datasheet:
Download the Datasheet

Skip to the beginning of the images gallery

Stock: 7902000

Qty:

Price: $0.0251

Total: $0.0251

Price

Qty Price Total price: 1 $0.0251 $0.0251; 500 $0.0228 $11.4000; 1000 $0.0217 $21.7000; 3000 $0.0207 $62.1000

Features

Unidirectional ESD protection of one line
Low clamping voltage: V_CL = 20 V at I_PPM = 15 A
ESD protection up to 30 kV
IEC 61000-4-5 (surge); I_PPM = 15 A at t_p = 8/20 µs

Applications

Computers and peripherals
Communication systems
Audio and video equipment
Data lines

Datasheet

Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode

PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P