PESD5V0X2UM

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

BOM New Arrivals Specials Automotive

Skip to the end of the images gallery

PESD5V0X2UM

main product photo

The image is for reference only

Please refer to the product specifications

PESD5V0X2UM

SKU:
PESD5V0X2UMYL
Short Description:
Ultra low capacitance unidirectional double ESD protection diode
Description:

Ultra low capacitance unidirectional double ElectroStatic Discharge (ESD) protection diode in a DFN1006-3 (SOT883) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines from the damage caused by ESD and other transients.
Datasheet:
Download the Datasheet

Skip to the beginning of the images gallery

Stock: 2020000

Qty:

Price: $0.0367

Total: $0.0367

Price

Qty Price Total price: 1 $0.0367 $0.0367; 500 $0.0333 $16.6500; 1000 $0.0318 $31.8000; 3000 $0.0302 $90.6000

Features

Ultra low diode capacitance: C_d = 0.50 pF
ESD protection up to 10 kV; IEC61000-4-2
I_PPM = 1.5 A; IEC 61643-321 (surge)
AEC-Q101 qualified

Applications

High-speed data lines
Portable electronics
Communication systems
Computers and peripherals

Datasheet

Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode

PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P