20 V, dual N

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

BOM New Arrivals Specials Automotive

Skip to the end of the images gallery

20 V, dual N

main product photo

The image is for reference only

Please refer to the product specifications

20 V, dual N

SKU:
PMDPB30XNZ
Short Description:
channel Trench MOSFET
Description:

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Datasheet:
Download the Datasheet

Skip to the beginning of the images gallery

Stock: 15000

Qty:

Price: $0.119

Total: $0.119

Price

Qty Price Total price: 1 $0.119 $0.119; 500 $0.1081 $54.0500; 1000 $0.103 $103.0000; 3000 $0.0981 $294.3000

Features

Very fast switching
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction

Applications

Relay driver
LED backlight driver
Low-side loadswitch
Switching circuits

Datasheet

Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode

PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P