• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
PMEG1030EJ
main product photo

The image is for reference only

Please refer to the product specifications

PMEG1030EJ
  • SKU:
    PMEG1030EJ-QX
  • Short Description:
      Q - 10 V, 3 A ultra low VF Schottky barrier rectifier
  • Description:
     

    Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small and flat lead SOD323F Surface-Mounted Device (SMD) plastic package.

  • Datasheet:
    Download the Datasheet
Stock: 99999999
Qty:
Price: $0.0658
Total: $0.0658
Price
Qty Price Total price
1 $0.0658 $0.0658
500 $0.0598 $29.9000
1000 $0.057 $57.0000
3000 $0.0543 $162.9000

Features

  • Forward current: 3 A

  • Reverse voltage: 10 V

  • Ultra low forward voltage

  • Small and flat lead SMD package

  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Low voltage rectification

  • High efficiency DC-to-DC conversion

  • Switched-mode power supply

  • Reverse polarity protection

  • Low power consumption applications

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P