• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
PMEG2005EH
main product photo

The image is for reference only

Please refer to the product specifications

PMEG2005EH
  • SKU:
    PMEG2005EH-QX
  • Short Description:
      Q - 20 V, 0.5 A very low VF MEGA Schottky barrier rectifier
  • Description:
     

    Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in a small SOD123F Surface-Mounted Device (SMD) plastic package.

  • Datasheet:
    Download the Datasheet
Stock: 51000
Qty:
Price: $0.0354
Total: $0.0354
Price
Qty Price Total price
1 $0.0354 $0.0354
500 $0.0322 $16.1000
1000 $0.0307 $30.7000
3000 $0.0292 $87.6000

Features

  • Very low forward voltage

  • Flat lead SMD package

  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Low voltage rectification

  • High efficiency DC-to-DC conversion

  • Switch mode power supply

  • Reverse polarity protection

  • Low power consumption applications

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P