PMEG2010AET

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

BOM New Arrivals Specials Automotive

Skip to the end of the images gallery

PMEG2010AET

main product photo

The image is for reference only

Please refer to the product specifications

PMEG2010AET

SKU:
PMEG2010AET,215
Short Description:
20 V, 1 A very low VF Schottky barrier rectifier
Description:

Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package.
Datasheet:
Download the Datasheet

Skip to the beginning of the images gallery

Stock: 72000

Qty:

Price: $0.0591

Total: $0.0591

Price

Qty Price Total price: 1 $0.0591 $0.0591; 500 $0.0538 $26.9000; 1000 $0.0512 $51.2000; 3000 $0.0488 $146.4000

Features

Forward current: I_F ≤ 1 A
Reverse voltage: V_R ≤ 20 V
Very low forward voltage
Small SMD plastic packages
AEC-Q101 qualified

Applications

Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications

Datasheet

Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode

PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P