PMEG3010BEA

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

BOM New Arrivals Specials Automotive

Skip to the end of the images gallery

PMEG3010BEA

main product photo

The image is for reference only

Please refer to the product specifications

PMEG3010BEA

SKU:
PMEG3010BEA,135
Short Description:
1 A low VF MEGA Schottky barrier rectifier
Description:

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small Surface-Mounted Device (SMD) plastic package.
Datasheet:
Download the Datasheet

Skip to the beginning of the images gallery

Stock: 20000

Qty:

Price: $0.0364

Total: $0.0364

Price

Qty Price Total price: 1 $0.0364 $0.0364; 500 $0.0331 $16.5500; 1000 $0.0315 $31.5000; 3000 $0.03 $90.0000

Features

Forward current: I_F ≤ 1 A
Reverse voltage: V_R ≤ 30 V
Very low forward voltage
Very small SMD plastic package

Applications

High efficiency DC-to-DC conversion
Voltage clamping
Protection circuits
Low voltage rectification
Blocking diodes
Low power consumption applications

Datasheet

Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode

PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P