PMEG6002EB

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

BOM New Arrivals Specials Automotive

Skip to the end of the images gallery

PMEG6002EB

main product photo

The image is for reference only

Please refer to the product specifications

PMEG6002EB

SKU:
PMEG6002EBF
Short Description:
60 V, 0.2 A very low VF Schottky barrier rectifier
Description:

Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in an ultra small SOD523 (SC-79) Surface-Mounted Device (SMD) flat lead plastic package.
Datasheet:
Download the Datasheet

Skip to the beginning of the images gallery

Stock: 190000

Qty:

Price: $0.0293

Total: $0.0293

Price

Qty Price Total price: 1 $0.0293 $0.0293; 500 $0.0266 $13.3000; 1000 $0.0254 $25.4000; 3000 $0.0242 $72.6000

Features

Forward current: I_F ≤ 0.2 A
Reverse voltage: V_R ≤ 60 V
Very low forward voltage
Ultra small and flat lead SMD plastic package

Applications

Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications

Datasheet

Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode

PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P