PMEG6020EPAS

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

BOM New Arrivals Specials Automotive

Skip to the end of the images gallery

PMEG6020EPAS

main product photo

The image is for reference only

Please refer to the product specifications

PMEG6020EPAS

SKU:
PMEG6020EPASX
Short Description:
60 V, 2 A low VF Schottky barrier rectifier
Description:
Datasheet:
Download the Datasheet

Skip to the beginning of the images gallery

Stock: 18000

Qty:

Price: $0.1268

Total: $0.1268

Price

Qty Price Total price: 1 $0.1268 $0.1268; 500 $0.1152 $57.6000; 1000 $0.1098 $109.8000; 3000 $0.1045 $313.5000

Features

Average forward current I_F(AV) ≤ 2 A
Reverse voltage V_R ≤ 60 V
Low forward voltage V_F ≤ 575 mV
Low reverse current
Reduced Printed-Circuit-Board (PCB) area requirements
Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity
Leadless small SMD plastic package with visible and solderable side pads
Suitable for Automatic Optical Inspection (AOI) of solder joints
AEC-Q101 qualified

Applications

Datasheet

Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode

PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P