PMN30ENEA

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

BOM New Arrivals Specials Automotive

Skip to the end of the images gallery

PMN30ENEA

main product photo

The image is for reference only

Please refer to the product specifications

PMN30ENEA

SKU:
PMN30ENEAH
Short Description:
40 V N-channel Trench MOSFET
Description:

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Datasheet:
Download the Datasheet

Skip to the beginning of the images gallery

Stock: 99999999

Qty:

Price: $0.0923

Total: $0.0923

Price

Qty Price Total price: 1 $0.0923 $0.0923; 500 $0.0839 $41.9500; 1000 $0.0799 $79.9000; 3000 $0.0761 $228.3000

Features

Logic-level compatible
Extended temperature range T_j = 175 °C
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)
AEC-Q101 qualified

Applications

Relay driver
High-speed line driver
Low-side load switch
Switching circuits

Datasheet

Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode

PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P