• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
PMPB12UNE
main product photo

The image is for reference only

Please refer to the product specifications

PMPB12UNE
  • SKU:
    PMPB12UNEX
  • Short Description:
      20 V, N-channel Trench MOSFET
  • Description:
     

    N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

  • Datasheet:
    Download the Datasheet
Stock: 96000
Qty:
Price: $0.1162
Total: $0.1162
Price
Qty Price Total price
1 $0.1162 $0.1162
500 $0.1056 $52.8000
1000 $0.1006 $100.6000
3000 $0.0958 $287.4000

Features

  • Trench MOSFET technology

  • Low threshold voltage

  • Exposed drain pad for excellent thermal conduction

  • Tin-plated 100% solderable side pads for optical solder inspection

  • ElectroStatic Discharge (ESD) protection > 1 kV HBM

Applications

  • LED driver

  • Power management

  • Low-side loadswitch

  • Switching circuits

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P