• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
PMT280ENEA
main product photo

The image is for reference only

Please refer to the product specifications

PMT280ENEA
  • SKU:
    PMT280ENEAX
  • Short Description:
      100 V N-channel Trench MOSFET
  • Description:
     

    N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

  • Datasheet:
    Download the Datasheet
Stock: 411000
Qty:
Price: $0.123
Total: $0.123
Price
Qty Price Total price
1 $0.123 $0.123
500 $0.1118 $55.9000
1000 $0.1065 $106.5000
3000 $0.1014 $304.2000

Features

  • Logic level compatible

  • Very fast switching

  • Trench MOSFET technology

  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

  • AEC-Q101 qualified

Applications

  • Relay driver

  • LED backlight driver

  • Low-side loadswitch

  • Switching circuits

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P