PMV213SN

PMV213SN

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Please refer to the product specifications

PMV213SN

SKU:
PMV213SN,215
Date Code:
2520+
Short Description:
N-channel TrenchMOS standard level FET
Description:

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology.
Datasheet:
Download the Datasheet

Stock: 1020000

Qty:

Price: $0.1172

Total: $0.1172

Price

Qty Price Total price: 1 $0.1172 $0.1172; 500 $0.1065 $53.2500; 1000 $0.1014 $101.4000; 3000 $0.0966 $289.8000

Datasheet

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

600 V, 30 A trench field-stop IGBT with full rated silicon diode

650 V, 10 A SiC Schottky diode in TO-220-2 R2P