PMXB65UPE
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Please refer to the product specifications
PMXB65UPE
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SKU:
PMXB65UPEZ
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Date Code:
2342+
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Short Description:
12 V, P-channel Trench MOSFET
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Description:
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- Datasheet:
Stock: 225000
Features
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1.5 kV HBM
Drain-source on-state resistance RDSon = 59 mΩ
Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V
Applications
High-side load switch and charging switch for portable devices
Power management in battery driven portables
LED driver
DC-to-DC converter
Datasheet
