• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
PMXB75UPE
main product photo

The image is for reference only

Please refer to the product specifications

PMXB75UPE
  • SKU:
    PMXB75UPEZ
  • Short Description:
      20 V, P-channel Trench MOSFET
  • Description:
     

    P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

  • Datasheet:
    Download the Datasheet
Stock: 95000
Qty:
Price: $0.065
Total: $0.065
Price
Qty Price Total price
1 $0.065 $0.065
500 $0.0591 $29.5500
1000 $0.0563 $56.3000
3000 $0.0536 $160.8000

Features

  • Trench MOSFET technology

  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

  • Exposed drain pad for excellent thermal conduction

  • ElectroStatic Discharge (ESD) protection 1.5 kV HBM

  • Drain-source on-state resistance RDSon = 69 mΩ

  • Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V

Applications

  • High-side load switch and charging switch for portable devices

  • Power management in battery driven portables

  • LED driver

  • DC-to-DC converter

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P